Mr. Kang is a registered patent attorney with expertise in physical science, material science, and semiconductor processing.

Prior to joining MUHANN, Mr. Kang served as a research engineer for SAMSUNG ELECTRONICS. During that time, he developed new manufacturing processes for advanced memories (FRAM, MRAM, PRAM) and ferroelectric memory device having expanded plate electrodes and method of fabricating the same. He also developed ferroelectric memory device including oxygen penetration path and encapsulated barrier layer and fabrication method thereof.

Mr. Kang received his bachelors of Science Degree in Physics with Honors from Korea University, and masters from Seoul National University. During graduate school, he participated in projects for developing 2D memory systems at CSNS (Center for Science in Nanometer Scale) of the ISRC (Inter-university Semiconductor Research Center).

* Education
Seoul National University, School of Physics(M. S. Physics)
Korea University, College of Science(B. S. Physics)

* Experience
Samsung Electronics Co., Ltd
CSNS of the ISRC

* Languages
Korean, English, Japanese